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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD812 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) *Good Linearity of hFE *Wide Area of Safe Operation *Complement to Type 2SB747 APPLICATIONS *High power amplifier applications. *Suitable for 15~20W home stereo output amplifier and voltage regulator. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w scs .i w VALUE 80 80 5 5 8 UNIT .cn mi e V V VEBO Emitter-Base Voltage V IC Collector Current-Continuous A ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature A PC 40 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD812 MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 50 A IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 A hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain hFE-3 DC Current Gain COB Collector Output Capacitance fT Current-Gain--Bandwidth Product hFE-2 Classifications R 40-80 Q 60-120 w w P 100-200 w. sem isc IC= 1A; VCE= 5V IC= 3A; VCE= 5V IE= 0; VCB= 10V; f= 1MHz IC= 0.5A; VCE= 5V .cn i 40 20 90 15 20 200 pF MHz isc Websitewww.iscsemi.cn 2 |
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